uv Photoemission for Rare Gases Implanted in Ge

B.J. Waclawski, J.W. Gadzuk, and J.F. Herbst

Physical Review Letters 41(8), 583-586 (1978)

Abstract:

The first ultraviolet photoemission spectra of the valence electrons of rare-gas atoms, implanted by ion bombardment into an amorphous Ge matrix, are presented here. The positions of the peaks in the observed spectra are shifted relative to gas-phase spectra, consistent with a final-state screening-energy shift which varies inversely with the radius of the particular implant, as predicted by a linear-response relaxation model described herein.




Center for Nanoscale Science and Technology
NIST is an agency of the U.S. Department of Commerce

Website Comments:epgwebmaster@nist.gov